X-ray diffraction analysis of GaN and AlGaN

Materials Research Society Symposium - Proceedings

Volumn 743, Issue , 2002, Pages 405-410

  Kang, H ^a   Spencer, N ^a   Nicol, D ^a   Feng, Z C ^a   Ferguson, I ^a   Guo, S P ^b   Pophristic, M ^b   Peres, B ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); GRAIN SIZE AND SHAPE; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

ALUMINUM GALLIUM NITRIDE; RECIPROCAL SPACE MAPPING; THREADING DISLOCATION DENSITY; WILLIAMSON HALL PLOT;

GALLIUM NITRIDE;

EID: 0037696035     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-743-l6.12     Document Type: Conference Paper

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