Nearly white-light emission from GaN-based light-emitting diodes integrated with a porous SiO2 layer

IEEE Photonics Technology Letters

Volumn 19, Issue 9, 2007, Pages 662-664

  Hsieh, Chih Hao ^a   Ke, Min Yung ^a   Shih, Ghien An ^a   Chiu, Tzu Yang ^a   Huang, Jian Jang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Light emitting diodes (LEDs); Si nanocrystal; SiO2 porous layer; White light

Indexed keywords

LIGHT EMISSION; MOS DEVICES; NANOCRYSTALS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

RED LIGHT; WHITE LIGHT;

LIGHT EMITTING DIODES;

EID: 34249711410     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.893760     Document Type: Article

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