Influence of the total gas flow rate on high rate growth microcrystalline silicon films and solar cells

Chinese Physics B

Volumn 18, Issue 8, 2009, Pages 3563-3567

  Xiao Yan, Han ^a   Guo Fu, Hou ^a   Xiao Dan, Zhang ^a   Chang Chun, Wei ^a   Gui Jun, Li ^a   De Kun, Zhang ^a   Xin Liang, Chen ^a   Jian, Sun ^a   Jian Jun, Zhang ^a   Ying, Zhao ^a   Xin Hua, Geng ^a  

^a NONE

Author keywords

High rate; Microcrystalline silicon; Solar cell; Total gas flow rate

Indexed keywords

CRYSTALLINE VOLUME FRACTION; FOURIER; GAS FLOWRATE; GAS TEMPERATURE; HIGH FREQUENCY HF; HIGH RATE; HIGH-RATE GROWTH; INFRARED MEASUREMENTS; INTRINSIC LAYER; MICRO-STRUCTURAL; MICROCRYSTALLINE SILICON FILMS; OPTOELECTRONIC PROPERTIES; SI:H THIN FILM; TOTAL GAS FLOW RATE; V-PARAMETER;

AERODYNAMICS; CELL MEMBRANES; CONVERSION EFFICIENCY; ELECTRONIC PROPERTIES; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; FLOW OF GASES; FLOW RATE; GASES; LEAKAGE (FLUID); MICROSTRUCTURE; OPTICAL EMISSION SPECTROSCOPY; PHOTOVOLTAIC CELLS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON SOLAR CELLS; SOLAR CELLS; THIN FILMS;

MICROCRYSTALLINE SILICON;

EID: 68949215199     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/8/071     Document Type: Article

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