SCOPUS 정보 검색 플랫폼

Surface and Coatings Technology

Volumn 173, Issue 2-3, 2003, Pages 243-248

Hollow electrode enhanced RF glow plasma for the fast deposition of microcrystalline silicon

(3) Tabuchi, Toshihiro a Takashiri, Masayuki a Mizukami, Hiroyuki a

a KOMATSU LTD (Japan)

Author keywords

Fast deposition; High density plasma; Hollow electrode; Low temperature; Plasma CVD; RF glow discharge; c Si thin film

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DEPOSITION; ELECTROCHEMICAL ELECTRODES; GLOW DISCHARGES; HYDROGENATION; LIGHT EMISSION; SILICON; THIN FILMS;

PLASMA EMISSION;

SURFACE TREATMENT;

PLASMA TREATMENT;

EID: 0038267223 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/S0257-8972(03)00664-9 Document Type: Article

Times cited : (19)

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