The effect of nitrogen pressure on the two-step method deposition of GaN films

Applied Physics A: Materials Science and Processing

Volumn 85, Issue 1, 2006, Pages 83-86

  Liu, M ^a   Man, B Y ^a   Xue, C S ^a   Zhuang, H Z ^a   Zhu, H C ^a   Wei, X Q ^a   Chen, C S ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLOGRAPHY; KINETIC ENERGY; NITROGEN; PULSED LASER DEPOSITION; SAPPHIRE; SINGLE CRYSTALS; THIN FILMS; X RAY DIFFRACTION;

ADATOMS; ANNEALING TEMPERATURE; NITROGEN GAS MOLECULES; NITROGEN PRESSURE;

GALLIUM NITRIDE;

EID: 33747487456     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-006-3656-3     Document Type: Article

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