Formation of GaN film by ammoniating Ga2O3 deposited on Si substrate with electrophoresis

International Journal of Modern Physics B

Volumn 16, Issue 28-29, 2002, Pages 4267-4270

  Yang, Li ^a   Xue, Chengshan ^a   Zhuang, Huizhao ^a   Li, Huaixiang ^a   Wei, Qinqin ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; GALLIUM; METAL OXIDE; NITROGEN DERIVATIVE; SILICON;

CHEMICAL COMPOSITION; CHEMICAL MODIFICATION; CONFERENCE PAPER; CRYSTAL STRUCTURE; ELECTROPHORESIS; FILM; INFRARED SPECTROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0037146269     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0217979202015236     Document Type: Conference Paper

References (16)

1. S. Nakamura, Science, 281, 956 (1998).
2. G. Fasol, Science, 272, 1751 (1996).
3. T. Tanaka, A. Watanabe, H. Amano et al., Appl. Phys. Lett, 64, 1377 (1994).
4. S. A. Nikishin, N. N. Faleev, V. G. Antipov et al., Appl. Phys. Lett, 75, 2073 (1999).
5. A. Sakai, H. Sunakawa, A. Usui, Appl. Phys. Lett, 71, 2259 (1997).
6. W. T. Young, S. R. P. Silva, J. Rodriguez et al., Diamond & Related Mater, 9, 456 (2000).
7. D. Wang, Y. Hiroyama, M. Tamura et al., J. Crystal Growth, 216, 44 (2000).
8. Y. Hiroyama, M. Tamura, Jpn. J. Appl. Phys, 37, L630 (1998).
9. S. N. Basu, T. Lei, T. D. Moustakas, J. Mater. Res, 9, 2370 (1994).
10. Y. X. Wang, J. Wen, Z. Guo et al., Chinese Journal of Semiconductor, 21(6), 570 (2000).
11. Yong Sun, Kenta Kirimoto, Tatsuro Miyasato, J. Appl. Phys, 85(6), 3377 (1999).
12. J. H. Boo, A. Scott, Ustin, Wilson Ho, J. Crystal Growth, 190, 183 (1998).
13. J. Ross, M. Rubin, T. K. Gustafson, J. Mater. Res, 8, 2613 (1993).
14. Nahlah Elkashef, R. S. Srinivasa, S. major et al., Thin Solid Film, 333, 9 (1998).
15. C. R. Kingsley, T. J. Whitaker, A. T. S. Wee et al., Mater. Sci. Eng, B 29, 78 (1995).
16. T. Sasaki, T. Matsuoka, J. App. Phys, 64, 4531 (1998).