Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation

Chinese Physics Letters

Volumn 23, Issue 2, 2006, Pages 489-492

  Peng, Cheng Xiao ^a   Weng, Hui Min ^a   Yang, Xiao Jie ^b   Ye, Bang Jiao ^a   Cheng, Bin ^a   Zhou, Xian Yi ^a   Han, Rong Dian ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRONS; II-VI SEMICONDUCTORS; OXYGEN; PHOTOLUMINESCENCE; POSITRONS; ZINC; ZINC OXIDE;

ARGON GAS; INTRINSIC DEFECTS; MONOENERGETIC POSITRON BEAM; O VACANCIES; OXYGEN FRACTIONS; OXYGEN GAS; RADIO FREQUENCY REACTIVE MAGNETRON SPUTTERING; VARIABLE RATIO; ZINC VACANCY; ZNO FILMS;

METALLIC FILMS;

EID: 31844440862     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/2/060     Document Type: Article

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