Preparation of Al-doped ZnO thin films by RF thermal plasma evaporation

Thin Solid Films

Volumn 407, Issue 1-2, 2002, Pages 86-91

  Tsujino, Jiro ^a   Homma, Norio ^a   Sugawara, Tomoaki ^b   Shimono, Isao ^b   Abe, Yoshihiko ^c  

^a Hokkaido Electric Power Co Inc   (Japan)

^b HOKKAIDO INDUSTRIAL TECHNOLOGY CENTER   (Japan)

^c HOKKAIDO INDUSTRIAL RESEARCH INSTITUTE   (Japan)

Author keywords

Al doped ZnO; Thermal plasma evaporation; Transparent conductive oxide film

Indexed keywords

ALUMINUM; CONDUCTIVE FILMS; DEPOSITION; ELECTRIC CONDUCTIVITY; EVAPORATION; FILM GROWTH; FILM PREPARATION; PLASMA APPLICATIONS; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS; ZINC OXIDE;

THERMAL PLASMA EVAPORATION;

THIN FILMS;

EID: 0037155438     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00017-2     Document Type: Conference Paper

References (16)