Solid phase epitaxy on N-type polysilicon films formed by aluminium induced crystallization of amorphous silicon

Thin Solid Films

Volumn 517, Issue 23, 2009, Pages 6358-6363

  Tuzun O ^a   Slaoui, A ^a   Roques, S ^a   Focsa, A ^a   Jomard, F ^b   Ballutaud, D ^b  

^a Faculté de Médecine   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

Aluminium induced crystallization; N type polycrystalline silicon; Optical analysis; Solid phase epitaxy

Indexed keywords

ALUMINIUM INDUCED CRYSTALLIZATION; AMORPHOUS SILICON LAYERS; ANNEALING TIME; AVERAGE GRAIN SIZE; CONVENTIONAL FURNACE; CRYSTALLINE FRACTIONS; CRYSTALLINITIES; DEGREE OF CRYSTALLINITY; FULL-WIDTH AT HALF MAXIMUMS; HALOGEN LAMPS; MICRO RAMAN SPECTROSCOPY; N-TYPE POLYCRYSTALLINE SILICON; OPTICAL ANALYSIS; PEAK POSITION; POLY-SI THIN FILM; POLYSILICON FILMS; PREFERENTIAL ORIENTATION; RAPID THERMAL PROCESS; SEED FILMS; SOLID PHASE EPITAXY; TUBE FURNACES; UV-VISIBLE SPECTROMETERS; X-RAY DIFFRACTION TECHNIQUES;

ALUMINUM; AMORPHOUS FILMS; CRYSTAL GROWTH; CRYSTALLIZATION; EPITAXIAL FILMS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; FURNACES; INTERNET PROTOCOLS; LIGHT TRANSMISSION; LIGHTING; OPTICAL MICROSCOPY; POLYCRYSTALLINE MATERIALS; POLYSILICON; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS;

AMORPHOUS SILICON;

EID: 68349113883     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.091     Document Type: Article

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