Epitaxial thickening of AIC poly-Si seed layers on glass by solid phase epitaxy

Journal of Crystal Growth

Volumn 276, Issue 1-2, 2005, Pages 19-28

  Widenborg, Per I ^a   Straub, Axel ^a   Aberle, Armin G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

A1. Crystal structure; A3. Aluminium induced crystallisation; A3. Polycrystalline deposition; A3. Solid phase epitaxy; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLIZATION; EVAPORATION; GLASS; GRAIN SIZE AND SHAPE; LIGHT REFLECTION; LIGHT TRANSMISSION; POLYSILICON; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET SPECTROSCOPY;

ALUMINUM-INDUCED CRYSTALLIZATION; POLYCRYSTALLINE DEPOSITION; SOLID-PHASE CRYSTALLIZATION; SOLID-PHASE EPITAXY;

EPITAXIAL GROWTH;

EID: 20444379250     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.155     Document Type: Article

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