N-type polycrystalline silicon films formed on alumina by aluminium induced crystallization and overdoping

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 6892-6895

  Tuzun O ^a   Slaoui, A ^a   Gordon, I ^b   Focsa, A ^a   Ballutaud, D ^c   Beaucarne, G ^b   Poortmans, J ^b  

^a Faculté de Médecine   (France)

^b IMEC   (Belgium)

^c Centre National de la Recherche Scientifique   (France)

Author keywords

Alumina; Aluminium induced crystallization; N type polycrystalline silicon; Phosphorus diffusion; Surface analysis

Indexed keywords

ALUMINUM; ALUMINUM CLADDING; AMORPHOUS FILMS; AMORPHOUS MATERIALS; CHARGED PARTICLES; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRON BEAM LITHOGRAPHY; ELECTRON MICROSCOPES; ELECTRONS; EPITAXIAL GROWTH; LIGHT METALS; MASS SPECTROMETRY; MICROFLUIDICS; MICROSCOPES; MOLECULAR BEAM EPITAXY; NANOCRYSTALLINE ALLOYS; NONMETALS; OPTICAL INSTRUMENTS; ORE TREATMENT; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SCANNING; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON; SLAGS; THERMAL DIFFUSION; THERMAL DIFFUSION IN LIQUIDS;

ALUMINA SUBSTRATES; ALUMINIUM-INDUCED CRYSTALLIZATION; DOPING EFFICIENCY; HIGH TEMPERATURE (HT); OPTICAL MICROSCOPE (OM); OVERDOPING; P TYPE SILICON; PHOSPHORUS DISTRIBUTION; PHOSPHORUS DOPING; POLY SILICON FILMS; POLYCRYSTALLINE SILICON (LTPS) FILMS; RESISTIVITY MEASUREMENTS; SCANNING ELECTRON MICROSCOPE (SEM); SECONDARY ION MASS SPECTROSCOPY (SIMS); SIMS PROFILES; SOLID-SOURCE (SS); STRUCTURAL QUALITIES;

AMORPHOUS SILICON;

ALUMINUM; AMORPHOUS MATERIALS; CRYSTALLIZATION; LITHOGRAPHY; MASS SPECTRA; MICROSCOPES; NONMETALS; PHOSPHORUS; PLASTIC FILMS; POLYSILICONES; RESISTIVITY; THERMAL DIFFUSION;

EID: 45849140181     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.104     Document Type: Article

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