HfO2-III-nitride RF switch with capacitively coupled contacts

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 478-480

  Koudymov, Alexei ^a   Pala, Nezih ^b   Tokranov, V ^c   Oktyabrsky, Serge ^c   Gaevski, Mikhail ^d   Jain, R ^e   Yang, J ^e   Hu, X ^e   Shur, Michael ^a   Gaska, Remis ^e   Simin, Grigory ^f  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b FLORIDA INTERNATIONAL UNIVERSITY   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

^d PRINCETON UNIVERSITY   (United States)

^e SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^f UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

AlGaN GaN; Capacitive coupling; HfO2; High k dielectric; Radio frequency (RF) switch

Indexed keywords

ALGAN/GAN; CAPACITIVE COUPLING; HFO2; HIGH-K DIELECTRIC; RADIO-FREQUENCY (RF) SWITCH;

GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; PASSIVATION;

SWITCHES;

EID: 67349096321     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2017284     Document Type: Article

References (16)

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