Effects of temperature and carrier gas flow amount on the formation of GaN nanorods by the HVPE method

Journal of Crystal Growth

Volumn 311, Issue 16, 2009, Pages 4146-4151

  Kwon, H Y ^a   Shin, M J ^a   Choi, Y J ^a   Moon, J Y ^a   Ahn, H S ^a   Yi, S N ^a   Kim, S ^b   Ha, D H ^b   Park, S H ^c  

^a Korea Maritime University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Catholic University of Daegu   (South Korea)

Author keywords

A1. Low dimensional structures; A1. Nanostructures; A3. Hydride vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

A1. LOW DIMENSIONAL STRUCTURES; A1. NANOSTRUCTURES; A3. HYDRIDE VAPOR PHASE EPITAXY; ALN BUFFER; AVERAGE DIAMETER; B2. SEMICONDUCTING III-V MATERIALS; CARRIER GAS FLOW; EFFECTS OF TEMPERATURE; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FLOW RATIOS; GAN NANORODS; GROWTH TIME; HYDRIDE VAPOR PHASE EPITAXY; ONE-DIMENSIONAL; OPTICAL CHARACTERISTICS; RF-SPUTTERING; X- RAY DIFFRACTION;

AERODYNAMICS; CRYSTAL GROWTH; FLOW OF GASES; GALLIUM NITRIDE; GROWTH TEMPERATURE; NANORODS; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; VAPOR PHASE EPITAXY; VAPORS;

GALLIUM ALLOYS;

EID: 68249119717     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.07.002     Document Type: Article

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