Room-temperature synthesis of ultraviolet-emitting nanocrystalline GaN films using photochemical vapor deposition

Applied Physics Letters

Volumn 85, Issue 15, 2004, Pages 3059-3061

  Yamazaki, Shunsuke ^a   Yatsui, Takashi ^b   Ohtsu, Motoichi ^b,c   Kim, Taw Won ^d   Fujioka, Hiroshi ^d,e  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^e INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; NANOSTRUCTURED MATERIALS; NITRIDING; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE; SYNTHESIS (CHEMICAL); ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC COMPOSITION; PHOTOCHEMICAL VAPOR DEPOSITION (PCVD); ROOM TEMPERATURE;

GALLIUM NITRIDE;

EID: 8644233445     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1806271     Document Type: Article

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