Lateral variations in self-assembled InGaAs quantum dot distributions

Journal of Crystal Growth

Volumn 311, Issue 16, 2009, Pages 4109-4115

  Roshko, Alexana ^a   Harvey, Todd E ^a   Hyland, Brit L ^a   Lehman, Susan Y ^a   Cobry, Keith D ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

A1. Atomic force microscopy; A1. Nanostructures; A1. Self assembly; A3. Molecular beam epitaxy; A3. Quantum dots; B1. InAs GaAs

Indexed keywords

A1. ATOMIC FORCE MICROSCOPY; A1. NANOSTRUCTURES; A1. SELF-ASSEMBLY; A3. MOLECULAR BEAM EPITAXY; A3. QUANTUM DOTS; B1. INAS/GAAS;

ATOMIC FORCE MICROSCOPY; ATOMS; CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURES; OPTICAL WAVEGUIDES; SELF ASSEMBLY; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WIRES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 68049143154     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.06.040     Document Type: Article

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