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Volumn 289, Issue 1, 2006, Pages 14-17

Long wavelength and narrow photoluminescence linewidth from InAs quantum dots with GaAs cap layer on GaAs (1 0 0) substrate

Author keywords

A1. Atomic force microscopy; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconducting III V materials

Indexed keywords

MATRIX ALGEBRA; MONOLAYERS; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

GAAS CAP LAYER; GAAS MATRIX; INAS QUANTUM DOTS; PHOTOLUMINESCENCE INTENSITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33244467888 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.10.108 Document Type: Article

Times cited : (6)

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