Reflection high energy electron diffraction observation of surface mass transport at the two- to three-dimensional growth transition of InAs on GaAs(001)

Applied Physics Letters

Volumn 87, Issue 25, 2005, Pages 1-3

  Patella, F ^a   Arciprete, F ^a   Fanfoni, M ^a   Sessi, V ^a   Balzarotti, A ^a   Placidi, E ^b  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

MASS TRANSFER; MOLECULAR BEAM EPITAXY; MONOLAYERS; NUCLEATION; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SURFACE PHENOMENA;

ADSORPTION-DESORPTION PROCESSES; COMPRESSIVE STRAINS; SURFACE MASS DIFFUSION; SURFACE MASS TRANSPORT;

REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

EID: 29144463682     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2147731     Document Type: Article

References (29)

1. A. G. Cullis, D. J. Norris, T. Walther, M. A. Migliorato, and M. Hopkinson, Phys. Rev. B 66, 081305 (2002).
2. S. Fukatsu, K. Fujita, H. Yaguchi, Y. Shiraki, and R. Ito, Appl. Phys. Lett. 59, 2103 (1991).
3. O. Dehaese, X. Wallart, and F. Mollot, Appl. Phys. Lett. 66, 52 (1995).
4. Y. Tu and J. Tersoff, Phys. Rev. Lett. 93, 216101 (2004).
5. T. Walther, A. G. Cullis, D. J. Norris, and M. Hopkinson, Phys. Rev. Lett. 86, 2381 (2001).
6. J. M. Moison, C. Guille, F. Houzay, F. Barthe, and M. Van Rompay, Phys. Rev. B 40, 6149 (1989).
7. F. Patella, S. Nufris, F. Arciprete, M. Fanfoni, E. Placidi, A. Sgarlata, and A. Balzarotti, Phys. Rev. B 67, 205308 (2003).
8. P. B. Joyce, T. J. Krzyzewski, G. R. Bell, B. A. Joyce, and T. S. Jones, Phys. Rev. B 58, R15981 (1998).
9. F. Patella, M. Fanfoni, F. Arciprete, S. Nufris, E. Placidi, and A. Balzarotti, Appl. Phys. Lett. 78, 320 (2001).
10. F. Patella, A. Sgarlata, F. Arciprete, S. Nufris, P. Skutznik, E. Placidi, M. Fanfoni, N. Motta, and A. Balzarotti, J. Phys.: Condens. Matter 16, S1503 (2004).
11. E. Placidi, F. Arciprete, V. Sessi, M. Fanfoni, F. Patella, and A. Balzarotti, Appl. Phys. Lett. 86, 241913 (2005).
12. J. J. Harris, B. A. Joyce, and P. J. Dobson, Surf. Sci. 103, L90 (1981).
13. H. Yamaguchi and Y. Horikoshi, J. Appl. Phys. 0021-8979 10.1063/1.351209 71, 1753 (1992); H. Yamaguchi and Y. Horikoshi, J. Appl. Phys. 68, 1610 (1990).
14. H. Yamaguchi and Y. Horikoshi, J. Appl. Phys. 0021-8979 10.1063/1.351209 71, 1753 (1992); H. Yamaguchi and Y. Horikoshi, J. Appl. Phys. 68, 1610 (1990).
15. B. W. Liang and C. W. Tu, J. Appl. Phys. 72, 2806 (1992).
16. C. T. Foxon and B. A. Joyce, Surf. Sci. 50, 435 (1975).
17. J. H. Neave, P. J. Dobson, B. A. Joyce, and J. Zhang, Appl. Phys. Lett. 47, 100 (1985).
18. H. Toyoshima, T. Shitara, P. N. Fawcett, J. Zhang, J. H. Neave, and B. A. Joyce, J. Appl. Phys. 73, 2333 (1993).
19. C. Heyn and W. Hansen, J. Cryst. Growth 251, 218 (2003).
20. A. Ohtake and M. Ozeki, Appl. Phys. Lett. 78, 431 (2001).
21. J. H. Neave, B. A. Joyce, P. J. Dobson, and N. Norton, Appl. Phys. A: Solids Surf. 31, 1 (1983).
22. An anomalously high pre-exponential factor ν0 =1.5× 1019 s-1 was reported for In desorption (versus 1013 s-1 for GaAs); see C. Sasaoka, Y. Kato, and A. Usui, Appl. Phys. Lett. 62, 2338 (1993).
23. An anomalously high pre-exponential factor ν0 =1.5× 1019 s-1 was reported for In desorption (versus 1013 s-1 for GaAs); see C. Sasaoka, Y. Kato, and A. Usui, Appl. Phys. Lett. 62, 2338 (1993).
24. Y. Horikoshi, M. Kawashima, and H. Yamaguchi, Jpn. J. Appl. Phys., Part 1 27, 169 (1988).
25. J. M. Millunchick, A. Riposan, B. J. Dali, C. Pearson, and B. G. Orr, Appl. Phys. Lett. 83, 1361 (2003).
26. E. Penev, S. Stojkovic', P. Kratzer, and M. Scheffler, Phys. Rev. B 69, 115335 (2004).
27. E. Penev, P. Kratzer, and M. Scheffler, Phys. Rev. B 64, 085401 (2001).
28. M. C. Xu, Y. Temko, T. Suzuki, and K. Jacobi, Surf. Sci. 589, 91 (2005).
29. T. R. Ramachandran, R. Heitz, P. Chen, and A. Madhukar, Appl. Phys. Lett. 70, 640 (1997).