Enhancement of NiSi-based nanocrystal formation by incorporating Ge elements for nonvolatile memory devices

Journal of the Electrochemical Society

Volumn 156, Issue 9, 2009, Pages

  Hu, Chih Wei ^a   Chang, Ting Chang ^b   Tu, Chun Hao ^a   Chiang, Cheng Neng ^a   Lin, Chao Cheng ^a   Lee, Sheng Wei ^c   Chang, Chun Yen ^a   Sze, Simon M ^a   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COSPUTTERING; DENSITY DISTRIBUTIONS; ENERGY-DISPERSIVE SPECTROMETERS; FORMATION PROCESS; MEMORY EFFECTS; MIXED FILMS; NANOCRYSTAL FORMATION; NANOCRYSTAL MEMORY DEVICES; NANOCRYSTAL SIZES; NANOCRYSTAL STRUCTURES; NITROGEN AMBIENT; NONVOLATILE MEMORY DEVICES; NUCLEATION CENTER; QUANTUM CONFINEMENT EFFECTS; RETENTION CHARACTERISTICS; THERMAL PROCESS; THERMAL TREATMENT;

GERMANIUM; HEAT TREATMENT; NANOCRYSTALS; NONVOLATILE STORAGE; RAMAN SPECTROSCOPY; SEMICONDUCTOR STORAGE; TRANSMISSION ELECTRON MICROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 68049137128     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3167386     Document Type: Article

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