Formation of ultrahigh density Ge nanodots on oxidized Ge/Si(111) surfaces

Journal of Applied Physics

Volumn 95, Issue 9, 2004, Pages 5014-5018

  Nakamura, Yoshiaki ^a,b   Nagadomi, Yasushi ^a   Sugie, Kaoru ^a   Miyata, Noriyuki ^c   Ichikawa, Masakazu ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; EPITAXIAL GROWTH; OXIDATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICA; ULTRATHIN FILMS; WETTING;

NANODOTS; QUANTUM CARRIER CONFINEMENT; ULTRAHIGH DENSITY;

NANOSTRUCTURED MATERIALS;

EID: 2442436806     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1690863     Document Type: Article

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