Quantum regulation of Ge nanodot state by controlling barrier of the interface layer

Applied Physics Letters

Volumn 88, Issue 25, 2006, Pages

  Nakayama, Yasuo ^a   Matsuda, Iwao ^b   Hasegawa, Shuji ^b   Ichikawa, Masakazu ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; GERMANIUM; INTERFACES (MATERIALS); SEMICONDUCTOR QUANTUM DOTS; SILICON;

CONTROLLING BARRIERS; EPITAXIAL NANODOTS; INTERFACE LAYERS; QUANTUM REGULATION;

NANOSTRUCTURED MATERIALS;

EID: 33745463193     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2216893     Document Type: Article

References (22)

1. M. Zacharias and P. M. Fauchet. Appl. Phys. Lett. 71, 380 (1997).
2. S. Takeoka, M. Fujii, S. Hayashi, and K. Yamamoto, Phys. Rev. B 58, 7921 (1998).
3. Y. M. Niquet, G. Allan, C. Delerue, and M. Lannoo, Appl. Phys. Lett. 77, 1182 (2000).
4. C. Bostedt, T. van Buuren, J. M. Plitzko, T. Möller, and L. J. Terminello, J. Phys.: Condens. Matter 15, 1017 (2003).
5. A. I. Yakimov, V. A. Markov, A. V. Dvurechenskii, and O. P. Pchelyakov, J. Phys.: Condens. Matter 6, 2573 (1994).
6. E. Leobandung, L. Guo, Y. Wang, and S. Y. Chou, Appl. Phys. Lett. 67, 938 (1995).
7. Y.-W. Mo, D. E. Savage, B. S. Swartrentruber, and M. G. Legally, Phys. Rev. Lett. 65, 1020 (1990).
8. A. A. Shklyaev, M. Shibata, and M. Ichikawa, Phys. Rev. B 58, 15647 (1998).
9. A. A. Shklyaev, M. Shibata, and M. Ichikawa, Phys. Rev. B 62, 1540 (2000).
10. A. A. Shklyaev and M. Ichikawa, Appl. Phys. Lett. 80, 1432 (2002).
11. A. A. Shklyaev and M. Ichikawa, Surf. Sci. 5.14, 19 (2002).
12. A. V. Kolobov, A. A. Shklyaev, H. Oyanagi, P. Fons, S. Yamasaki, and M. Ichikawa, Appl. Phys. Lett. 78, 2563 (2001).
13. S. P. Cho, N. Tanaka, and M. Ichikawa (unpublished).
14. A. Konchenko, Y. Nakayama, I. Matsuda, S. Hasegawa, Y. Nakamura, and M. Ichikawa, Phys. Rev. B 73, 113311 (2006).
15. Y. Nakamura, K. Watanabe, Y. Fukuzawa, and M. Ichikawa, Appl. Phys. Lett. 87, 133119 (2005).
16. J. Adamowski, M. Sobkowicz, B. Szafran, and S. Bednarek, Phys. Rev. B 62, 4234 (2000).
17. M. Ciurla, J. Adamowski, B. Szafran, and S. Bednarek, Physica E (Amsterdam) 15, 261 (2002).
18. Y. Nakamura, Y. Nagadomi, K. Sugie, N. Miyala, and M. Ichikawa, J. Appl. Phys. 95, 5014 (2004).
19. Y. Kajiyama, Y. Tanishiro, and K. Takayanagi, Surf. Sci. 222, 47 (1989).
20. K. Sakamoto, S. Doi, Y. Ushimi, K. Ohno, H. W. Yeom, T. Ohta, S. Suto, and W. Uchida, Phys. Rev. B 60, R8465 (1999).
21. J. W. Keister, J. E. Rowe, J. J. Kolodziej, H. Niimi, T. E. Madey, and G. Lucovsky, J. Vac. Sci. Technol. B 17, 1831 (1999).
22. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1986).