Effects of a thermal CVD SiN passivation film on AlGaN/GaN HEMTs

IEICE Transactions on Electronics

Volumn E91-C, Issue 7, 2008, Pages 1009-1014

  Marui, Toshiharu ^a   Hoshi, Shinich ^a   Itoh, Masanori ^a   Tamai, Isao ^a   Toda, Fumihiko ^a   Okita, Hideyuki ^a   Sano, Yoshiaki ^a   Seki, Shohei ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

AlGaN GaN HEMTs; Current collapse; Gate insulator; Passivation film; Thermal CVD SiN

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; FLOW OF GASES; FOURIER TRANSFORMS; GALLIUM NITRIDE; INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; MIS DEVICES; PASSIVATION; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE;

ALGAN/GAN HEMTS; CURRENT COLLAPSE; GATE INSULATOR; PASSIVATION FILM; THERMAL CVD;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67949090235     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e91-c.7.1009     Document Type: Article

References (7)

1. H. Okita, K. Kaifu, J. Mita, T. Yamada, Y. Sano, H. Ishikawa, T. Egawa, and T. Jimbo, "High transconductance AlGaN/GaN HEMT with recessed gate on sapphire substrate," Phys. Stat. Sol.(a), vol.200, no.1, pp. 187-190, 2003.
2. T. Kikkawa, M. Nagahara, N. Okamoto, Y. Tateno, Y. Yamaguchi, N. Hara, K. Joshin, and P.M. Asbeck, "Surface-charge controlled AlGaN/GaN power HFET without current collapse and gm dispersion," IEEE IEDM Tech. Digest, pp.585-588, Dec. 2001.
3. 4 passivation film deposition on current collapse in AlGaN/GaN HEMTs," IEICE Trans. Electron, vol.E89-C, no.7, pp.1052-1056, July 2006.
4. T. Hirao, K. Setsune, M. Kitagawa, T. Kamada, K. Wasa, K. Tsukamoto, and T. Izurai, "Hydrogen concentration and bond configrations in silicon nitride films prepared by ECR plasma CVD method," Jpn. J. Appl. Phys., vol.27, no.1, pp.30-34, 1988. (Pubitemid 18581510)
5. x: H films by infrared spectroscopy and hydrogen forward scattering results," J. Non-Cryst. Solids, vol.187, pp.308-312, 1995.
6. 2 plasma chemical vapor deposition of films as very high rates," Jpn. J. Appl. Phys. Pt. 1, vol.37, no.4A, pp.1996-2001, 1998.
7. S.W. King, J.P. Barnak, M.D. Bremser, K.M. Tracy, C. Ronning, R.F. Davis, and R.J. Nemanich, "Cleaning of A1N and GaN surfaces," J. Appl. Phys., vol.84, no.9, pp.5248-5260, 1998.