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Volumn 117, Issue 2-3, 2009, Pages 425-429

Barrier capability of Zr-N films with titanium addition against copper diffusion

Author keywords

Cu interconnection; Diffusion barrier; Magnetron sputtering; Zr Ti N

Indexed keywords

BARRIER CAPABILITY; BARRIER LAYERS; CONTACT SYSTEMS; COPPER DIFFUSION; CU DIFFUSION; CU INTERCONNECTION; CU METALLIZATION; HIGH THERMAL STABILITY; LOCAL DEFECTS; MATERIAL ANALYSIS; SHEET RESISTANCE MEASUREMENTS; SI PRECIPITATES; SI SUBSTRATES; SPUTTERING DEPOSITION; THERMAL STABILITY; TI ATOMS; XPS; XPS ANALYSIS; XRD; ZR-TI-N; ZRN FILMS;

EID: 67651221912     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2009.06.029     Document Type: Article
Times cited : (9)

References (26)
  • 26
    • 67651245556 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors (ITRS) 2006 Updates, Semiconductor Industry Association International, San Jose, CA, 2006.
    • International Technology Roadmap for Semiconductors (ITRS) 2006 Updates, Semiconductor Industry Association International, San Jose, CA, 2006.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.