Analysis of Ti-Si-N diffusion barrier films obtained by r.f. Magnetron sputtering

Microelectronic Engineering

Volumn 50, Issue 1-4, 2000, Pages 509-513

  Le Brizoual, L ^a   Guilet, S ^a   Lemperiere G ^a   Granier, A ^a   Coulon, N ^a   Lancin, M ^a   Turban, G ^a  

^a UNIVERSITÉ DE NANTES   (France)

Author keywords

Diffusion barrier; HRTEM; Magnetron; Ti Si N

Indexed keywords

AMORPHOUS FILMS; ARGON; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY DISPERSIVE SPECTROSCOPY; GRAIN SIZE AND SHAPE; INTERDIFFUSION (SOLIDS); MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; NITROGEN COMPOUNDS; THIN FILMS; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

DIFFUSION BARRIER FILMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM);

SEMICONDUCTING FILMS;

EID: 0033640089     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00321-4     Document Type: Article

References (8)

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