Highly thermal-stable amorphous Ta Si2Cx films as diffusion barrier

Journal of the Electrochemical Society

Volumn 155, Issue 2, 2008, Pages

  Lin, Ting Yi ^a,d   Cheng, Huai Yu ^a   Chin, Tsung Shune ^b   Chiu, Chin Fu ^c   Fang, Jau Shiung ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DIFFUSION BARRIERS; INTEGRATED CIRCUITS; SHEET RESISTANCE; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY;

CARBON CONTENT; CRYSTALLIZATION TEMPERATURE; INTEGRATED-CIRCUIT PROCESSING; STRUCTURAL CHANGES;

THIN FILMS;

EID: 37549041688     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2819625     Document Type: Article

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