High temperature stability of Zr-Si-N diffusion barrier in Cu/Si contact system

Microelectronic Engineering

Volumn 71, Issue 1, 2004, Pages 69-75

  Wang, Ying ^a   Zhu, Changchun ^a   Song, Zhongxiao ^a   Li, Ying ^b  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Cu metallization; Diffusion barrier; Sputtering; Zr Si N

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; COPPER; DEPOSITION; DIFFUSION; MAGNETRON SPUTTERING; SCANNING ELECTRON MICROSCOPY; SILICON; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONTACT SYSTEMS; DIFFUSION BARRIERS; SHEET RESISTANCES;

THIN FILMS;

EID: 0344740923     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.09.002     Document Type: Article

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