5-nm-thick TaSiC amorphous films stable up to 750 °c as a diffusion barrier for copper metallization

Applied Physics Letters

Volumn 91, Issue 15, 2007, Pages

  Lin, Ting Yi ^a   Cheng, Huai Yu ^a   Chin, Tsung Shune ^b,d   Chiu, Chin Fu ^c   Fang, Jau Shiung ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^d NATIONAL APPLIED RESEARCH LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION BARRIERS; MAGNETRON SPUTTERING; METALLIZING; OPTIMIZATION; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

COPPER METALLIZATION; MAGNETRON COSPUTTERING; STABILITY TEMPERATURES;

AMORPHOUS FILMS;

EID: 35248846921     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2799245     Document Type: Article

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