The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures

Nanotechnology

Volumn 20, Issue 29, 2009, Pages

  Bougerol, C ^a   Songmuang, R ^a,b   Camacho, D ^a   Niquet, Y M ^a   Mata, R ^c   Cros, A ^c   Daudin, B ^a  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

^c UNIVERSITY OF VALENCIA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CAPPING LAYER; CAPPING MECHANISM; CRITICAL THICKNESS; HETEROSTRUCTURES; NANOCOLUMN; PLASTIC RELAXATION; STRAIN STATE; THEORETICAL MODELING;

CRYSTALS; GALLIUM ALLOYS; GALLIUM NITRIDE; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

NANOMATERIAL; NANOWIRE;

ARTICLE; CONTROLLED STUDY; MORPHOLOGY; PRIORITY JOURNAL; RAMAN SPECTROMETRY; THEORETICAL MODEL; TRANSMISSION ELECTRON MICROSCOPY;

EID: 67651210730     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/29/295706     Document Type: Article

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