High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer

Nanotechnology

Volumn 20, Issue 30, 2009, Pages

  Wang, Y ^a   Zou, J ^a   Zhao, Z M ^b   Hao, Z ^b   Wang, K L ^b  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITY; GAAS; HIGH QUALITY; INAS; INAS QUANTUM DOTS; LATERAL EXPANSION; LATTICE DEFECTS; MISFIT STRAINS; QUANTUM DOT; SI(1 0 0);

BUFFER LAYERS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; GALLIUM ALLOYS; INDIUM ARSENIDE; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

ARSENIC; BUFFER; GALLIUM; INDIUM; NANOMATERIAL; QUANTUM DOT; SILICON;

ARTICLE; ELECTRON ENERGY LOSS SPECTROSCOPY; MORPHOLOGY; NANOCHEMISTRY; PRIORITY JOURNAL; QUALITY CONTROL; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 67651156073     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/30/305301     Document Type: Article

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