Crystal shape of GaAs nanocrystals deposited on Si(100) by molecular beam epitaxy

Thin Solid Films

Volumn 516, Issue 9, 2008, Pages 2487-2490

  Usui, Hiroyuki ^a   Yasuda, Hidehiro ^a   Mori, Hirotaro ^b  

^a KOBE UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Crystal growth; GaAs Si; Nanoscale material; TEM

Indexed keywords

CRYSTAL GROWTH; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

DOME STRUCTURE; NANOSCALE MATERIALS;

MOLECULAR BEAM EPITAXY;

EID: 39449128862     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.04.132     Document Type: Article

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