Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and Si O2 substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 945-947

  Yoon, I ^a   Yi, C ^a   Kim, T ^a   Brown, A S ^a   Seabaugh, A ^b  

^a Duke University   (United States)

^b University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH TEMPERATURE; INDIUM ARSENIDE; SILICA; SIZE DISTRIBUTION; SUBSTRATES; SURFACE MORPHOLOGY; SURFACE TREATMENT;

DIFFERENT SIZE DISTRIBUTIONS; ISLAND DENSITY; SUBSTRATE ORIENTATION; SURFACE PRETREATMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34249874882     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2739568     Document Type: Article

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