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Applied Physics Letters

Volumn 92, Issue 8, 2008, Pages

Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer

(5) Zhao, Zuoming a Hao, Zhibiao a Yadavalli, Kameshwar a Wang, Kang L a Jacob, Ajey P a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

OPTICAL ACTIVITY; OPTOELECTRONIC APPLICATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 40049110573 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2833700 Document Type: Article

Times cited : (16)

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