New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

Nanotechnology

Volumn 18, Issue 35, 2007, Pages

  Alonso González, Pablo ^a   González, Luisa ^a   González, Yolanda ^a   Fuster, David ^a   Fernández Martínez, Iván ^a   Martín Sánchez, Javier ^a   Abelmann, Leon ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; INDIUM ARSENIDE; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; OXIDATION; SEMICONDUCTOR GROWTH; SUBSTRATES;

LASER INTERFERENCE LITHOGRAPHY; OPTICAL QUALITY; PATTERNING TECHNOLOGIES;

SEMICONDUCTOR QUANTUM DOTS;

OZONE; QUANTUM DOT;

ARTICLE; CHEMICAL BINDING; GEOMETRY; LASER; OPTICAL RESOLUTION; OXIDATION; PRIORITY JOURNAL; QUALITY CONTROL; ULTRAVIOLET RADIATION;

EID: 34548687249     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/35/355302     Document Type: Article

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