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Volumn 1, Issue 4, 2008, Pages 0412031-0412033
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Enhanced temperature characteristics of InGaAs/InAIGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
LASERS;
SEMICONDUCTING INDIUM;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
SUBSTRATES;
CHARACTERISTIC TEMPERATURES;
INALGAAS;
MATERIAL GAINS;
MULTI QUANTUM WELLS;
TEMPERATURE CHARACTERISTICS;
TERNARY SUBSTRATES;
QUANTUM WELL LASERS;
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EID: 57049115528
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.1143/APEX.1.041203 Document Type: Article |
Times cited : (8)
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References (16)
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