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Volumn 170, Issue 1-4, 1997, Pages 743-747
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Structural investigation of MOVPE grown InGaAs buffer layers
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Author keywords
[No Author keywords available]
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Indexed keywords
DISLOCATIONS (CRYSTALS);
ELASTICITY;
EPITAXIAL GROWTH;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
X RAY DIFFRACTION ANALYSIS;
RESIDUAL ELASTIC STRAIN;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0030718204
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00562-3 Document Type: Article |
Times cited : (4)
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References (19)
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