1.3 μm high T0 strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1996, Pages 71-72

  Kurakake, H ^a   Uchida, T ^a   Higashi, T ^a   Ogita, S ^a   Kobayashi, M ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

HEAT SINK TEMPERATURE; OPTICAL CONFINEMENT FACTOR; RIDGE WAVEGUIDE LASERS;

QUANTUM WELL LASERS;

EID: 0030392544     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)