A 1.31 μm ridge waveguide laser for 10 Gbps direct modulation on an InGaAs ternary substrate

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2008, Pages

  Arai, Masakazu ^a   Fujisawa, Takeshi ^a   Kobayashi, Wataru ^a   Kawaguchi, Yoshihiro ^a   Yuda, Masahiro ^a   Tadokoro, Takashi ^a   Kondo, Yasuhiro ^a   Kinoshita, Kyoichi ^b   Ueda, Toshiaki ^b   Yoda, Shinichi ^b  

^a NTT CORPORATION   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Components; Direct modulation; InGaAs; Laser

Indexed keywords

BULK CRYSTAL GROWTH; COMPONENTS; DATA TRANSMISSION; DIRECT MODULATION; HIGHLY STRAINED; INDIUM CONTENT; INGAAS; INGAAS QUANTUM WELLS; LASER OPERATIONS; LONG WAVELENGTH; RIDGE WAVEGUIDE LASERS; SHORT CAVITY; SINGLE LATERAL MODE; TERNARY SUBSTRATES;

GRAIN BOUNDARIES; INDIUM PHOSPHIDE; LASERS; LIGHT EMITTING DIODES; MODULATION; SEMICONDUCTING INDIUM; SUBSTRATES; WAVEGUIDES;

QUANTUM WELL LASERS;

EID: 70149109415     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2008.4702954     Document Type: Conference Paper

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