GaSb-based VCSEL with buried tunnel junction for emission around 2.3 μm

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 3, 2009, Pages 933-940

  Bachmann, Alexander ^a   Kashani Shirazi, Kaveh ^a   Arafin, Shamsul ^a   Amann, Markus Christian ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

GaSb; Semiconductor lasers; Tunable diode laser absorption spectroscopy; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

ACTIVE REGIONS; BURIED TUNNEL JUNCTION; CONTINUOUS WAVE OPERATION; ELECTRICALLY PUMPED; GAS SENSING APPLICATIONS; GASB; MATERIAL SYSTEMS; MID-IR EMISSIONS; N-DOPED; OPTICAL CONFINEMENT; SINGLE MODE OPERATION; TUNABILITY; TUNABLE DIODE LASER ABSORPTION SPECTROSCOPY; VERTICAL-CAVITY SURFACE EMITTING LASER; VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL); WAVELENGTH RANGES;

GALLIUM ALLOYS; GAS ABSORPTION; LASERS; LEAKAGE (FLUID); OPTICAL WAVEGUIDES; PUMPING (LASER); SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS; SURFACE EMITTING LASERS; SURFACES; TUNNEL JUNCTIONS; WIND TUNNELS;

ABSORPTION SPECTROSCOPY;

EID: 67650792691     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2013361     Document Type: Article

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