Room-temperature continuous-wave operation of 2.3-μm Sb-based electrically pumped monolithic vertical-cavity lasers

IEEE Photonics Technology Letters

Volumn 20, Issue 20, 2008, Pages 1745-1747

  Ducanchez, A ^a   Cerutti, L ^a   Grech, P ^a   Genty, F ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

Electrically pumped; GaSb; Tunnel junction (TJ); Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

ACTIVE REGIONS; ALGAASSB; BRAGG MIRRORS; CONTINUOUS WAVE OPERATION; CONTINUOUS-WAVE OPERATIONS; CW-LASER; ELECTRICALLY PUMPED; EMITTING AREAS; MULTIQUANTUM WELLS; N-DOPED; ROOM TEMPERATURE; VERTICAL CAVITY LASERS; VERTICAL-CAVITY SURFACE EMITTING LASER;

CONTINUOUS WAVE LASERS; GALLIUM ALLOYS; LASERS; MICROOPTICS; OPTICAL WAVEGUIDES; SURFACE EMITTING LASERS; TUNNEL JUNCTIONS;

PUMPING (LASER);

EID: 61349127751     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2004997     Document Type: Article

References (11)

1. A. Ouvrard, A. Garnache, L. Cerutti, F. Genty, and D. Romanini, "Single frequency tuneable Sb-based VCSEL emitting at 2.3 μm," IEEE Photon. Technol. Lett., vol.17, no.10, pp. 2020-2022, Oct. 2005.
2. N. Schulz, M. Rattunde, C. Manz, K. Köhler, C. Wild, J. Wagner, S.-S. Beyertt, U. Brauch, T. Kübler, and A. Giesen, "Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3 μm," IEEE Photon. Technol. Lett., vol.18, no.9, pp. 1070-1072, May 1, 2006.
3. J.-M. Hopkins, A. J. Maclean, D. Burns, E. Riis, N. Schulz, M. Rat-tunde, C. Manz, K. Köhler, and J. Wagner, "Tunable, single-frequency, diode pumped 2.3 μm VECSEL," Opt. Express, vol.15, no.13, pp. 8212-8217, Jun. 2007.
4. M. Ortsiefer, G. Böhm, M. Grau, K. Windhorn, E. Rönneberg, J. Rosskopf, R. Shau, O. Dier, and M.-C. Amann, "Electrically pumped room temperature CW VCSELs with 2.3 μm emission wavelength," Electron. Lett., vol.42, no.11, pp. 640-641, May 2006.
5. G. Almuneau, F. Genty, A. Wilk, P. Grech, A. Joullie, and L. Chusseau, "GaInSb/AlGaAsSb strained quantum well laser emitting at 1.55 μm at room temperature," Semicond. Sci. Technol., vol.14, pp. 89-92, Jan. 1999.
6. M. Grau, C. Lin, O. Dier, C. Lauer, and M.-C. Amann, "Room- temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers," Appl. Phys. Lett., vol.87, Dec. 2005, Article 241104.
7. L. Cerutti, A. Ducanchez, P. Grech, A. Garnache, and F. Genty, "Room-temperature, monolithic, electrically-pumped type-I quantum well Sb-based VCSELs emitting at 2.3 μm," Electron. Lett., vol.44, no.3, pp. 203-205, Jan. 2008.
8. A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer, and M.-C. Amann, "Continuous-wave operation of electrically pumped GaSb-based vertical cavity surface emitting laser at 2.3 μm," Electron. Lett., vol.44, no.3, pp. 202-203, Jan. 2008.
9. A. Perona, A. Garnache, L. Cerutti, A. Ducanchez, S. Mihindou, P. Grech, G. Boissier, and F. Genty, "AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 μm," Semicond. Sci. Technol., vol.22, pp. 1140-1144, Oct. 2007.
10. L. Cerutti, A. Garnache, A. Ouvrard, and F. Genty, "High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm," J. Cryst. Growth, vol.268, pp. 128-134, Jan. 2004.
11. O. Dier, S. Dachs, M. Grau, C. Lin, C. Lauer, and M. C. Amann, "Effects of thermal annealing on the band gap of GaInAsSb," Appl. Phys. Lett., vol.86, no.15, p. 151120, Apr. 2005.