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Volumn 44, Issue 3, 2008, Pages 203-205

Roomerature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3m

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; DISTRIBUTED BRAGG REFLECTORS; DOPING (ADDITIVES); GALLIUM COMPOUNDS; SUBSTRATES; THRESHOLD CURRENT DENSITY;

EID: 38849128349     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20083424     Document Type: Article
Times cited : (13)

References (9)
  • 2
    • 0034812993 scopus 로고    scopus 로고
    • Oxygen measurements at high pressures with vertical cavity surface emitting lasers
    • Wang, J., Sanders, S.T., Jeffries, J.B., and Hanson, R.K.: ' Oxygen measurements at high pressures with vertical cavity surface emitting lasers ', Appl. Phys. B, 2001, 72, p. 865-872
    • (2001) Appl. Phys. B , vol.72 , pp. 865-872
    • Wang, J.1    Sanders, S.T.2    Jeffries, J.B.3    Hanson, R.K.4
  • 6
    • 3142729129 scopus 로고    scopus 로고
    • 2.36m diode pumped VCSEL operating at room temperature in continuous wave with circular TEM00 output beam
    • 10.1049/el:20045067 0013-5194
    • Cerutti, L., Garnache, A., Ouvrard, A., Garcia, M., Cerda, E., and Genty, F.: ' 2.36m diode pumped VCSEL operating at room temperature in continuous wave with circular TEM00 output beam ', Electron. Lett., 2004, 40, p. 869-871 10.1049/el:20045067 0013-5194
    • (2004) Electron. Lett. , vol.40 , pp. 869-871
    • Cerutti, L.1    Garnache, A.2    Ouvrard, A.3    Garcia, M.4    Cerda, E.5    Genty, F.6
  • 7
    • 0032484829 scopus 로고    scopus 로고
    • Sb-based monolithic VCSEL operating near 2.2m at room temperature
    • 10.1049/el:19980142 0013-5194
    • Baranov, A.N., Rouillard, Y., Boissier, G., Grech, P., Gaillard, S., and Alibert, C.: ' Sb-based monolithic VCSEL operating near 2.2m at room temperature ', Electron. Lett., 1998, 34, p. 281-282 10.1049/el:19980142 0013-5194
    • (1998) Electron. Lett. , vol.34 , pp. 281-282
    • Baranov, A.N.1    Rouillard, Y.2    Boissier, G.3    Grech, P.4    Gaillard, S.5    Alibert, C.6
  • 9
    • 33750219369 scopus 로고    scopus 로고
    • N-InAsSb/p-GaSb tunnel junctions with extremely low resistivity
    • 10.1049/el:20060341 0013-5194
    • Dier, O., Lauer, C., and Amann, M.C.: ' n-InAsSb/p-GaSb tunnel junctions with extremely low resistivity ', Electron. Lett., 2006, 42, p. 419-420 10.1049/el:20060341 0013-5194
    • (2006) Electron. Lett. , vol.42 , pp. 419-420
    • Dier, O.1    Lauer, C.2    Amann, M.C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.