Improved microwave noise performance by SiN passivation in AlGaN/GaN HEMTs on si

IEEE Microwave and Wireless Components Letters

Volumn 19, Issue 6, 2009, Pages 383-385

  Liu, Z H ^a   Arulkumaran, S ^a   Ng, G I ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

GaN HEMT; modeling; noise; passivation; Si substrate

Indexed keywords

ALGAN/GAN HEMTS; CHANNEL NOISE; CORRELATION COEFFICIENT; EQUIVALENT CIRCUIT PARAMETER; GAN HEMT; HIGH RESISTIVITY SILICON; INTRINSIC TRANSCONDUCTANCE; MICROWAVE NOISE; MICROWAVE NOISE PERFORMANCE; MINIMUM NOISE FIGURE; MODELING; NOISE; NOISE COEFFICIENT; NOISE PERFORMANCE; NOISE SOURCE; SI SUBSTRATE; SMALL SIGNAL; SOURCE RESISTANCE; SURFACE PASSIVATION;

GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVES; NOISE FIGURE; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM; SILICON; SILICON NITRIDE; SUBSTRATES;

PASSIVATION;

EID: 67650455897     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2009.2020027     Document Type: Article

References (14)

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