Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate

Proceedings - 2005 IEEE International Workshop on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, RFIT 2005

Volumn 2005, Issue , 2005, Pages 127-130

  Liu, Z H ^a   Arulkumaran, S ^a   Ng, G I ^a   Cheong, W C ^a   Zeng, R ^a   Bu, J ^a   Wang, H ^a   Radhakrishnan, K ^a   Tan, C H ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

High electron mobility transistors; Microwave measurements; Microwave power amplifiers; Semiconductor device fabrication; Semiconductor device noise

Indexed keywords

COST EFFECTIVENESS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE AMPLIFIERS; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON;

MICROWAVE MEASUREMENTS; MICROWAVE POWER AMPLIFIERS; SEMICONDUCTOR DEVICE FABRICATION; SEMICONDUCTOR DEVICE NOISE;

SPURIOUS SIGNAL NOISE;

EID: 33847305471     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIT.2005.1598891     Document Type: Conference Paper

References (11)

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