High Temperature RF Characterisation of SiN Passivated and Unpassivated AlGaN/GaN HFETs

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 275-278

  Harrison, I ^a   Clayton, N W ^a   Jeffs, N J ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011485849     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<275::AID-PSSA275>3.0.CO;2-D     Document Type: Article

References (7)

1. M.A. KHAN, J.N. KUZNIA, A.R. BHATTARAI, and D.T. OLSON, Appl. Phys. Lett. 62, 1786 (1993).
2. M.A. KHAN, J.N. KUZNIA, D.T. OLSON, W.J. SCHAFF, J.W. BURM, and M.S. SHUR, Appl. Phys. Lett. 65, 1121 (1994).
3. Y-F. WU, D. KAPOLNEK, J. IBBETSON, N-Q. ZHANG, P. PARIKH, B.P. KELLER, and U.K. MISHRA, IEDM Tech Dig., 925 (1999).
4. S.C. BINARI, K. IKOSSI, J.A. ROUSSOS, W. KRUPPA, D. PARK, H.B. DIETRICH, D.D. KOLESKE, A.E. WICKENDEN, and R.L. HENRY, IEEE Trans. Electron. Devices 48, 465 (2001).
5. B.R. GREEN, K.K. CHU, E.M. CHUMBES, J.A. SMART, J.R. SHEALY, and L.F. EASTMAN, IEEE Electron Device Lett. 21, 268 (2001).
6. L.F. EASTMAN, phys. stat. sol. (a) 176, 175 (1999).
7. T.W. MACELWEE, J.A. BARDWELL, H. TANG, and J.B. WEBB, Mater. Sci. Forum 338, 1647 (2000).