A model for negative bias temperature instability in oxide and high κ pFETs

Proceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Volumn , Issue , 2007, Pages 105-109

  Zafar, Sufi ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

High k metal gate pFETs; Model; NBTI; Oxide pFETs

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUITS; PASSIVATION; SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

INTEGRATED CIRCUIT (IC) DESIGN; INTERNATIONAL CONFERENCES; NEGATIVE BIAS- TEMPERATURE-INSTABILITY (NBTI);

NEGATIVE TEMPERATURE COEFFICIENT;

EID: 47349122623     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICICDT.2007.4299550     Document Type: Conference Paper

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