Characterization of neutron- and alpha-particle-induced transients leading to soft errors in 90-nm CMOS technology

IEEE Transactions on Device and Materials Reliability

Volumn 9, Issue 2, 2009, Pages 325-333

  Narasimham, Balaji ^a   Gadlage, Matthew J ^b   Bhuva, Bharat L ^b   Schrimpf, Ronald D ^b   Massengill, Lloyd W ^b   Holman, W Timothy ^b   Witulski, Arthur F ^b   Reed, Robert A ^b   Weller, Robert A ^b   Zhu, Xiaowei ^c  

^a BROADCOM CORPORATION   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

Alpha; Failure in time (FIT); Neutron; Pulsewidth; Single event; Single event transient (SET); Soft error; Soft error rate (SER)

Indexed keywords

ALPHA; FAILURE IN TIME (FIT); PULSEWIDTH; SINGLE EVENT; SINGLE-EVENT TRANSIENT (SET); SOFT ERROR; SOFT ERROR RATE (SER);

CMOS INTEGRATED CIRCUITS; ERROR CORRECTION; MICROPROCESSOR CHIPS; NEUTRONS;

TRANSIENTS;

EID: 67650293612     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2009.2020912     Document Type: Article

References (18)

1. R. C. Baumann, "The impact of technology scaling on soft error rate performance and limits to the efficacy of error correction," in IEDM Tech. Dig., 2002, pp. 329-332.
2. P. Shivakumar, M. Kistler, S. W. Keckler, D. Burger, and L. Alvisi, "Modeling the effect of technology trends on the soft error rate of combinational circuit," in Proc. DSN, 2002, pp. 389-398.
3. M. Nicolaidis, "Time redundancy based soft-error tolerance to rescue nanometer technologies," in Proc. IEEE VLSI Test Symp., 1999, pp. 86-94.
4. A. Balasubramanian, B. L. Bhuva, J. D. Black, and L. W. Massengill, "RHBD techniques for mitigating effects of single-event hits using guard-gates," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2531-2535, Dec. 2005.
5. B. Narasimham, V. Ramachandran, B. L. Bhuva, R. D. Schrimpf, A. F. Witulski, W. T. Holman, L. W. Massengill, J. D. Black, W. H. Robinson, and D. McMorrow, "On-chip characterization of single event transient pulse widths," IEEE Trans. Device Mater. Rel., vol. 6, no. 4, pp. 542-549, Dec. 2006.
6. B. Narasimham, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, M. J. Gadlage, O. A. Amusan, W. T. Holman, A. F. Witulski, W. H. Robinson, J. D. Black, J. M. Benedetto, and P. H. Eaton, "Char-acterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2506-2511, Dec. 2007.
7. B. Narasimham, R. L. Shuler, J. D. Black, B. L. Bhuva, R. D. Schrimpf, A. F. Witulski, W. T. Holman, and L. W. Massengill, "Quantifying the effectiveness of guard bands in reducing the collected charge leading to soft errors," in Proc. IEEE IRPS, 2007, pp. 676-677.
8. P. E. Dodd and L. W. Massengill, "Basic mechanisms and modeling of single-event upset in digital microelectronics," IEEE Trans. Nucl. Sci., vol. 50, no. 3, pp. 583-602, Jun. 2003.
9. B. D. Olson, O. A. Amusan, S. Dasgupta, L. W. Massengill, A. F. Witulski, B. L. Bhuva, M. L. Alles, K. M. Warren, and D. R. Ball, "Analysis of parasitic PNP bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology," IEEE Trans. Nucl. Sci., vol. 54, no. 4, pp. 894-897, Aug. 2007.
10. Y. Yanagawa, D. Kobayashi, K. Hirose, T. Makino, H. Saito, H. Ikeda, S. Onoda, T. Hirao, and T. Ohshima, "Experimental verification of scanarchitecture-based evaluation technique of SET and SEU soft error rates at each flip-flop in logic VLSI systems," IEEE Trans. Nucl. Sci., to be published.
11. H. T. Nguyen, Y. Yagil, N. Seifert, and M. Reitsma"Chip-level soft error estimation method," IEEE Trans. Device Mater. Rel., vol. 5, no. 3, pp. 365-381, Sep. 2005.
12. M. S. Gordon, P. Goldhagen, K. P. Rodbell, T. H. Zabel, H. K. Tang, J. M. Clem, and P. Bailey, "Measurement of the flux and energy spectrum of cosmic-ray induced neutrons on the ground," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3427-3434, Dec. 2004.
13. R. C. Baumann, "Soft errors in advanced semiconductor devices-Part I: The three radiation sources," IEEE Trans. Device Mater. Rel., vol. 1, no. 1, pp. 17-22, Mar. 2001.
14. K. M. Warren, R. A. Weller, M. H. Mendenhall, R. A. Reed, D. R. Ball, C. L. Howe, B. D. Olson, M. L. Alles, L. W. Massengill, R. D. Schrimpf, N. F. Haddad, S. E. Doyle, D. McMorrow, J. S. Melinger, and W. T. Lotshaw, "The contribution of nuclear reactions to heavy ion sin gle event upset cross-section measurements in a high-density SEU hard ened SRAM," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2125-2131, Dec. 2005.
15. S. Agostinelli, J. Allison, K. Amako, J. Apostolakis, H. Araujo, P. Arce, M. Asai, D. Axen, S. Banerjee, G. Barrand, F. Behner, L. Bellagamba, J. Boudreau, L. Broglia, A. Brunengo, H. Burkhardt, S. Chauvie, J. Chuma, R. Chytracek, G. Cooperman, G. Cosmo, P. Degtyarenko, A. dell'Acqua, G. Depaola, D. Dietrich, R. Enami, A. Feliciello, C. Ferguson, H. Fesefeldt, G. Folger, F. Foppiano, A. Forti, S. Garelli, S. Giani, R. Giannitrapani, D. Gibin, J. J. Gómez Cadenas, I. González, G. Gracia Abril, G. Greeniaus, W. Greiner, V. Grichine, A. Grossheim, S. Guatelli, P. Gumplinger, R. Hamatsu, K. Hashimoto, H. Hasui, A. Heikkinen, A. Howard, V. Ivanchenko, A. Johnson, F. W. Jones, J. Kallenbach, N. Kanaya, M. Kawabata, Y. Kawabata, M. Kawaguti, S. Kelner, P. Kent, A. Kimura, T. Kodama, R. Kokoulin, M. Kossov, H. Kurashige, E. Lamanna, T. Lampén, V. Lara, V. Lefebure, F. Lei, M. Liendl, W. Lockman, F. Longo, S. Magni, M. Maire, E. Medernach, K. Minamimoto, P. Mora de Freitas, Y. Morita, K. Murakami, M. Nagamatu, R. Nartallo, P. Nieminen, T. Nishimura, K. Ohtsubo, M. Okamura, S. O'Neale, Y. Oohata, K. Paech, J. Perl, A. Pfeiffer, M. G. Pia, F. Ranjard, A. Rybin, S. Sadilov, E. di Salvo, G. Santin, T. Sasaki, N. Savvas, Y. Sawada, S. Scherer, S. Sei, V. Sirotenko, D. Smith, N. Starkov, H. Stoecker, J. Sulkimo, M. Takahata, S. Tanaka, E. Tcherniaev, E. Safai Tehrani, M. Tropeano, P. Truscott, H. Uno, L. Urban, P. Urban, M. Verderi, A. Walkden, W. Wander, H. Weber, J. P. Wellisch, T. Wenaus, D. C. Williams, D. Wright, T. Yamada, H. Yoshida, and D. Zschiesche, "GEANT4 - A simulation toolkit," Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol. 506, no. 3, pp. 250-303, Jul. 2003.
16. M. J. Gadlage, R. D. Schrimpf, B. Narasimham, J. A. Pellish, K. M. Warren, R. A. Reed, R. A. Weller, B. L. Bhuva, L. W. Massengill, and X. Zhu, "Assessing alpha particle-induced single event transient vulnerability in a 90-nm CMOS technology," IEEE Electron Device Lett., vol. 29, no. 6, pp. 638-640, Jun. 2008.
17. O. A. Amusan, A. F. Witulski, L. W. Massengill, B. L. Bhuva, P. R. Fleming, M. L. Alles, A. L. Sternberg, J. D. Black, and R. D. Schrimpf, "Charge collection and charge sharing in a 130 nm CMOS technology," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3253-3258, Dec. 2006.
18. N. Seifert, P. Slankard, M. Kirsch, B. Narasimham, V. Zia, C. Brookreson, A. Vo, S. Mitra, B. Gill, and J. Maiz, "Radiation-induced soft error rates of advanced CMOS bulk devices," in Proc. IEEE Int. Rel. Phys. Symp., 2006, pp. 217-225.