Explicit compact model for ultranarrow body FinFETs

IEEE Transactions on Electron Devices

Volumn 56, Issue 7, 2009, Pages 1543-1547

  Tang, Mingchun ^a   Pregaldiny, Fabien ^a   Lallement, Chrsitophe ^a   Sallese, Jean Michel ^b  

^a UNIVERSITÉ DE STRASBOURG   (France)

^b EPFL   (Switzerland)

Author keywords

Compact modeling; Explicit model; FinFET; Quantum effects; Short channel effects (SCEs)

Indexed keywords

COMPACT MODELING; EXPLICIT MODEL; FINFET; QUANTUM EFFECTS; SHORT-CHANNEL EFFECTS (SCES);

ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); QUANTUM THEORY; SEMICONDUCTOR QUANTUM WIRES;

POWDERS;

EID: 67650177370     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2020324     Document Type: Article

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