Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

Solid-State Electronics

Volumn 52, Issue 1, 2008, Pages 99-106

  Diagne, Birahim ^a   Prégaldiny, Fabien ^a   Lallement, Christophe ^a   Sallese, Jean Michel ^b   Krummenacher, François ^b  

^a Faculté de Médecine   (France)

^b EPFL   (Switzerland)

Author keywords

Compact model; DG MOSFET; DIBL; Roll off; Short channel effects (SCEs); Threshold voltage

Indexed keywords

COMPUTATIONAL GEOMETRY; COMPUTER SIMULATION; ELECTRIC CURRENTS; GATE DIELECTRICS; MATHEMATICAL MODELS; THRESHOLD VOLTAGE;

COMPACT MODELS; DG MOSFET; DIBL; ROLL-OFF; SHORT-CHANNEL EFFECTS (SCE);

MOSFET DEVICES;

EID: 36248950689     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.06.020     Document Type: Article

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