Impact of floating dot distribution on memory characteristics of self-aligned dots-on-nanowire memory

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Nakajima, Anri ^a   Fujiaki, Tomo ^a   Ezaki, Tatsuya ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL WIDTHS; DESIGN GUIDELINES; DEVICE PERFORMANCE; FABRICATION PROCESS; FLOATING DOT; MEMORY DEVICE; NANO SCALE; NON-VOLATILE MEMORIES; OPERATING VOLTAGE; PROGRAMMING SPEED; RETENTION CHARACTERISTICS; RETENTION TIME; SELF-ALIGNED;

NANOWIRES;

FLASH MEMORY;

EID: 67649513444     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3130604     Document Type: Article

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