Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process

Applied Physics Letters

Volumn 71, Issue 3, 1997, Pages 353-355

  Nakajima, Anri ^a   Futatsugi, Toshiro ^a   Kosemura, Kinjiro ^a   Fukano, Tetsu ^a   Yokoyama, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001243974     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119535     Document Type: Article

References (8)

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8. E. Leobandung, L. Guo, Y. Wang, and S. Y. Chou, Appl. Phys, Lett. 67, 938 (1995).