Si single-electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 5, 1999, Pages 2163-2171

  Nakajima, Anri ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22844456813     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590886     Document Type: Article

References (2)

1. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, IEEE Trans. Electron Devices 41, 1628 (1994).
2. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, IEEE International Electron Devices Meeting, 1995, p. 521.