Dependence of charge storage and programming characteristics on dot number of floating dot memory

Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

  Nakajima, Anri ^a   Fujiaki, Tomo ^a   Fukuda, Yuusuke ^a,b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b RICOH COMPANY LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; NONVOLATILE STORAGE; SEMICONDUCTING SILICON; SILICON; STORAGE (MATERIALS); THRESHOLD VOLTAGE;

AMERICAN INSTITUTE OF PHYSICS (AIP); CHARGE STORAGE; LOW POWERS; MEMORY WINDOWS; METAL-OXIDE SEMICONDUCTOR (MOS); NANO SCALING; NARROW CHANNELS; NON-VOLATILE MEMORY (NVM); PROGRAMMING CHARACTERISTICS; RETENTION CHARACTERISTICS; RETENTION TIME (RT); SELF ALIGNED (SA); THRESHOLD VOLTAGE SHIFTS;

DATA STORAGE EQUIPMENT;

EID: 44849125631     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2937136     Document Type: Article

References (10)

1. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.310117 41, 1628 (1994).
2. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.116085 68, 1377 (1996).
3. S. Tiwari, F. Rana, K. Chan, L. Shi, and H. Hanafi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.117421 69, 1232 (1996).
4. M. Saitoh, E. Nagata, and T. Hiramoto, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1562343 82, 1787 (2003).
5. G. Molas, B. D. Salvo, G. Ghibaudo, D. Mariolle, A. Toffoli, N. Buffet, R. Puglisi, S. Lombardo, and S. Deleonibus, IEEE Trans. Nanotechnol. ZZZZZZ 1536-125X 3, 42 (2004).
6. A. Nakajima, T. Futatsugi, K. Kosemura, T. Fukano, and N. Yokoyama, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118653 70, 1742 (1997).
7. A. Nakajima, T. Futatsugi, K. Kosemura, T. Fukano, and N. Yokoyama, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.119535 71, 353 (1997).
8. A. Nakajima, T. Futatsugi, K. Kosemura, T. Fukano, and N. Yokoyama, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.590886 17, 2163 (1999).
9. L. Guo, E. Leobandung, and S. Y. Chou, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118236 70, 850 (1997).
10. A. Nakajima, H. Aoyama, and K. Kawamura, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 10.1143/JJAP.33.L1796 33, L1796 (1994).